Jane P Chang

Professor, 5532-D Boelter Hall, (310) 206-7980, jpchang@ucla.edu
Associate Dean, 7400 Boelter Hall, (310) 206-0555

Jane Chang

Contact Information

Office: 5532-D Boelter Hall
Phone number: (310) 206-7980
Fax Number: (310) 206-4107

Research Website

Education

  • B.S. National Taiwan University, 1993.
  • M.S. Massachusetts Institute of Technology, 1995
  • Ph.D. Massachusetts Institute of Technology, 1998.

Awards

  • Rumbel Fellowship, MIT, 1993. 
  • AVS Coburn and Winters Award, 1996.
  • NSF Faculty Career Award, 2000-2004.
  • Chancellor’s Career Development Award, 2000-2004.
  • William F. Seyer Chair in Materials Electrochemistry, 2000-.
  • TRW Excellence in Teaching Award, 2002.
  • ONR Young Investigator Award, 2003.
  • Teacher of the Year, Chemical Engineering, UCLA, 2003.
  • Professor of the Year, Chemical Engineering, UCLA, 2004
  • AVS Peter Mark Award, 2005
  • Professor of the Year, Chemical Engineering, UCLA, 2009

Research Interests

  • Plasma chemistries and surface kinetics
  • Atomic layer deposition of complex and multifunctional oxide materials 
  • Semiconductor processing and chemistry
  • Computational surface chemistry
  • Nanostructured complex oxides

Recent Papers

  • M. Sawkar-Mathur and J.P. Chang, “Material and electrical properties of sputter-deposited HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductors field effect transistors devices”, Journal of Applied Physics, 104, 084101, (2008)
  • J. Hoang, C.C. Hsu and J.P. Chang, “Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. I. Feature scale modeling”, J. Vac. Sci. Technol. B., 26 (6), 2008.
  • C.C. Hsu, J. Hoang, V. Le and J.P. Chang, “Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. II. Coupling reactor and feature scale models”, J. Vac. Sci. Technol. B., 26 (6), 2008.
  • M. Sawkar-Mathur, S. Perng, J. Lu, H.-O. Blom, J. Bargar, and J. P. Chang, “The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge,” Applied Physics Letters, 93, 233501 (2008). 
  • J. Liu, Y. Mao, E. Lan, D. R. Banatao, G. J. Forse, J. Lu, H.-O. Blom, T. O. Yeates, B. Dunn, and J. P. Chang, “Generation of Oxide Nano-Patterns by Combining Self-Assembly of S-Layer Proteins and Area Selective Atomic Layer Deposition,” Journal of American Chemical Society, 130 (50), 16908-16913 (2008).   
  • R. M. Martin and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part I:  Effect of Complex Ions and Radicals on the Surface Reactions,” Journal of Vacuum Science and Technology A 27(2), 209-216 (2009). 
  • R. M. Martin, H.-O. Blom, and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part II:  Ion-enhanced Surface Reaction Mechanisms,” Journal of Vacuum Science and Technology A 27(2), 217-223 (2009). 
  • R. M. Martin and J. P. Chang, “Plasma Etching of Hf-based High-k Thin Films, Part III:  Modeling the Reaction Mechanisms,” Journal of Vacuum Science and Technology A 27(2), 224-229 (2009). 
  • Y. Mao, T, Tran, X. Guo, J. Y. Huang, C. K. Shih, K. L. Wang, and J. P. Chang, “Luminescence of Nanocrystalline Erbium-Doped Yttria,” Advanced Functional Materials, 19, 1-7 (2009). 
  • Y. Mao, X. Guo, J. Y. Huang, K. L. Wang, and J. P. Chang, “Luminescent Nanocrystals with A2B2O7 Composition Synthesized by a Kinetically Modified Molten Salt Method,” Journal of Physical Chemistry C, 113(4), 1204-1208 (2009).

Books

  • Chang, J. P., Book Chapter on “High-K Gate Dielectric Deposition Technology Survey” in High-K Gate Dielectric Materials for VLSI MOSFET, Springer-Verlag (2005), (ISBN: 3-540-21081-4).
  • Chen, F. F. and Chang J. P., Principles of Plasma Processing: A Lecture Course, Kluwer Academic Publishers, (ISBN: 0-306-47497-2), December 2002.
  • Chang, J. P, edited special issue on “Engineering Challenges in Nanotechnology”, International Journal of Engineering Education, Vol. 18 (5), 2002. (Invited)
  • Chang, J. P. and Coburn, J. W., Review paper on “Plasma-Surface Interactions “, The 50th Anniversary Commemorative Volume, American Vacuum Society (2003), Journal of Vacuum Science and Technology, A 21(5), Sept/Oct 2003. (Invited)

Courses Teaching

  • Chemical Engineering 101B
  • Chemical Engineering 103
  • Chemical Engineering 104C
  • Chemical Engineering 104CL
  • Chemical Engineering 116
  • Chemical Engineering 216
  • Chemical Engineering 234
  • Chemical Engineering 270