Robert Hicks

Professor, 5532-J Boelter Hall, (310) 206-6865, rhicks@ucla.edu

Robert Hicks

Contact Information

Office: 5532-J Boelter Hall
Phone number: (310) 206-6865
Fax number: (310) 206-4107

Research Website

Education

  • B.S. Chemical Engineering, University of Delaware, 1977
  • Ph.D. Chemical Engineering, University of California, Berkeley, 1984
  • Awards

    • Fellow, American Vacuum Society, 2001
    • R&D 100 Award, 1999
    • One of the Most Technologically Significant New Products of 1999
    • Chemical Engineering Department Professor of the Year Award: 1993, 1995, 1999, 2001, 2002, 2006, 2008 and 2010.

    Research Interests

    • Atmospheric pressure plasmas – physics, chemistry and materials processing
    • Semiconductor nanotechnology
    • Surface chemistry of materials

    Recent Papers

    • Das, U., Raghavachari, K., Woo, R. L., and Hicks, R. F., “Phosphine Adsorption on the In-rich InP (001) Surface: Evidence of Surface Dative Bonds at Room Temperature,” Langmuir 23, 10109-10115, 2007.
    • Lewis G. T., Nowling G. R., Hicks R. F., and Cohen Y., “Inorganic Surface Nanostructuring by Atmospheric Pressure Plasma-Induced Graft Polymerization,” Langmuir 23, 10756-10764, 2007.
    • Cheng, S. F., Gao, L., Woo, R. L., Pangan, A., Malouf, G., Goorsky, M. S., Wang, K. L., and Hicks, R. F., “Selective Area Metalorganic Vapor-Phase Epitaxy of Gallium Arsenide on Silicon,” J. Crystal Growth 310, 562-569, 2007.
    • Woo, R. L., Malouf, G., Cheng, S. F., Woo, R. N., Goorsky, M., and Hicks, R. F., “Red shift in photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride,” J. Crystal Growth 310, 579-583, 2008.
    • Ladwig, A. M., Koch, R. D., Wenski, E. G., and Hicks, R. F., “Atmospheric Plasma Deposition of Diamond-Like Carbon Coatings,” submitted to Diamond and Related Materials February 6, 2008.
    • Gonzalez II, E., Barankin, M. D., Guschl, P. C., and Hicks, R. F., “Remote Atmospheric-Pressure Plasma Activation of the Surfaces of Polyethylene Terephthalate and Polyethylene Naphthalate,” Langmuir 24(21), 12636-12643, 2008.
    • Woo, R. L., Xiao, R., Kobayashi, Y., Gao, L., Goel, N., Hudait, M. K., Mallouk, T. E., and Hicks, R. F., “Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111),” Nano Letters 8(12), 4664-4669, 2008.
    • Barankin, M. D., Gonzalez II, E., Habib, S. B., Gao, L., Guschl, P. C., and Hicks, R. F., “Hydrophobic films by atmospheric plasma curing of spun-on liquid precursors,” Langmuir 25(4), 2495-2500, 2009.
    • Gao, L, Woo, R. L., Liang, B., Pozuelo, M., Prikhodko, S., Jackson, M., Goel, N., Hudait, M. K., Huffaker, D., Goorsky, M. S., Kodambaka, S., and Hicks, R. F., “Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon,” Nano Letters 9(6), 2223-2228, 2009.
    • Woo, R. L., Gao, L, Kodambaka, S., Wang. K. L., Goel, N., Hudait, M. K., and Hicks, R. F., “Kinetic control of self-catalyzed indium phosphide nano- wires, cones, and pillars,” Nano Letters 9(6), 2207-2211, 2009.
    • Gonzalez II, E., Barankin, M. D., Guschl, P. C., and Hicks, R. F., “Surface activation of polymethyl-methacrylate via remote atmospheric pressure plasma,” Plasma Process. Poly. 6, 000, 2010.
    • Habib, S. B., Gonzalez II, E., and Hicks, R. F., “Atmospheric oxygen plasma activation of silicon (100) surfaces,” J. Vac. Sci. Technol. A 28, 476-485, 2010.
    • Gonzalez II, E., and Hicks, R. F., “Surface analysis of polymers treated by remote atmospheric pressure plasma,” Langmuir 26, 3710-3719, 2010. 

     

    Courses Taught

    • Chemical Engineering 101A, 101B and 101C, Transport Phenomena
    • Chemical Engineering 104A and 104B Laboratories
    • Chemical Engineering 104C Semiconductor Processing
    • Chemical Engineering 116, Surface and Interface Engineering
    • Chemical Engineering 210, Advanced Reaction Engineering
    • Chemical Engineering 234, Plasma Chemistry and Engineering